کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6536011 | 49321 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
12.4% Efficient Cu(In,Ga)Se2 solar cell prepared from one step electrodeposited Cu-In-Ga oxide precursor layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: 12.4% Efficient Cu(In,Ga)Se2 solar cell prepared from one step electrodeposited Cu-In-Ga oxide precursor layer 12.4% Efficient Cu(In,Ga)Se2 solar cell prepared from one step electrodeposited Cu-In-Ga oxide precursor layer](/preview/png/6536011.png)
چکیده انگلیسی
This paper presents new advances on an atmospheric-based deposition process for Cu(In,Ga)Se2 synthesis, consisting of the electrodeposition of a Cu-In-Ga mixed oxide/hydroxide layer from an aqueous solution, at room temperature, followed by a thermochemical reduction and selenization. This process enables the one-step co-deposition of the three elements, from a simple aqueous electrolyte containing nitrate ions as oxygen precursor, with fast growing rates and precise control of composition. The reduction process is carried out thermally in pure hydrogen atmosphere and leads to Cu-In-Ga metallic alloys. After selenization, Cu(In,Ga)Se2 phase was obtained and completed solar devices reach a 12.4% maximal power conversion efficiency.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 119, December 2013, Pages 241-245
Journal: Solar Energy Materials and Solar Cells - Volume 119, December 2013, Pages 241-245
نویسندگان
A. Duchatelet, T. Sidali, N. Loones, G. Savidand, E. Chassaing, D. Lincot,