Efficient Cu(In,Ga)Se2 thin film solar cells with reduced thickness of ZnS(O,OH) Buffer Layer

The basic cell parameters as a function of ZnS(O,OH) buffer layer thickness after HLS treatment for 120 min (without AR-coating). Open (○) and filled (●) symbols indicate the cell performance fabricated using 0.6 and 1.0 M thiourea solution, respectively. A high efficiency CIGS solar cell could be achieved by increasing thiourea concentration in CBD solution even if a very thin ZnS(O,OH) buffer layer was used.