Purification of metallurgical silicon by horizontal zone melting

► MG-Si (1,450 ppm of impurities) was processed by 1 and 2 passes of zone melting at 1 and 10 mm/min. ► ZM process reduced 98% of the total amount of impurities. ► C and O were reduced to levels presented in the electronic grade silicon. ► Electrical resistivity showed to be dependent on the B concentration, but not on the P or the total amount of impurities.