کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
658848 1458124 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave – Effects of baffle shape
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی جریان سیال و فرایندهای انتقال
پیش نمایش صفحه اول مقاله
Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave – Effects of baffle shape
چکیده انگلیسی

The numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed by using the SC/Tetra computational fluid dynamics software. The autoclave is assumed to be axisymmetric. Heat transfer by natural convection is discussed in the case of flat and funnel-shaped baffles. Simulation results show that the optimum baffle angle is approximately 20°. This result is identical to that obtained in our previous study on the hydrothermal ZnO crystal growth process.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Heat and Mass Transfer - Volume 53, Issues 5–6, February 2010, Pages 940–943
نویسندگان
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