کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6614147 | 459623 | 2014 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
One-pot hydrothermal synthesis of reduced graphene oxide/Ni(OH)2 films on nickel foam for high performance supercapacitors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Reduced graphene oxide (RGO) on nickel hydroxide (Ni(OH)2) film was synthesized via a green and facile hydrothermal approach. In this process, graphene oxide (GO) was reduced by nickel foam (NF) while the nickel metal was oxidized to Ni(OH)2 film simultaneously, which resulted in RGO on Ni(OH)2 structure. The RGO/Ni(OH)2 composite film was characterized using by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and field-emission scanning electron microscope (FESEM). The electrochemical performances of the supercapacitor with the as-synthesized RGO/Ni(OH)2 composite films as electrodes were evaluated using cyclic voltammetry (CV), galvanostatic charge-discharge (GCD), electrochemical impedance spectrometry (EIS) in 1Â M KOH aqueous solution. Results indicated that the RGO/Ni(OH)2/NF composite electrodes exhibited superior capacitive performance with high capability (2500Â mFÂ cmâ2 at a current density of 5Â mAÂ cmâ2, or 1667Â FÂ gâ1 at 3.3Â AÂ gâ1), compared with pure Ni(OH)2/NF (450Â mFÂ cmâ2 at 5Â mAÂ cmâ2, 409Â FÂ gâ1 at 3.3Â AÂ gâ1) prepared under the identical conditions. Our study highlights the importance of anchoring RGO films on Ni(OH)2 surface for maximizing the optimized utilization of electrochemically active Ni(OH)2 and graphene for energy storage application in supercapacitors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 115, 1 January 2014, Pages 155-164
Journal: Electrochimica Acta - Volume 115, 1 January 2014, Pages 155-164
نویسندگان
Shudi Min, Chongjun Zhao, Guorong Chen, Xiuzhen Qian,