کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6615983 | 459630 | 2013 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study and improvement of aluminium doped ZnO thin films: Limits and advantages
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
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چکیده انگلیسی
ZnO:Al films were deposited at 70 °C at a fixed â1.1 V potential onto ITO substrates from a 0.01 M Zn(NO3)2 + x Al(NO3)3·9H2O electrochemical bath, with Al3+ concentrations between 0 and 2 mM. Electrodeposition conditions were optimized to remove bubbles, increase grain size homogeneity and ensure adherence. Films were characterized by field emission scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, UV-vis transmittance, electrochemical impedance spectroscopy and photocurrent spectroscopy. Films were crystalline with the wurtzite structure and present a morphology made of hexagonal nano-pillars. It was found that Al incorporation increases gradually up to â¼11 at% for samples prepared within the concentration range 0.0-0.3 mM Al3+ in the bath. For higher Al3+ contents (>0.4 mM) an amorphous Al2O3-like compound develops on top of the films. In the grown films with Al contents up to 11 at%, changes in the optical band gap from 2.88 eV to 3.45 eV and in the carrier densities from 1019 to 1020 cmâ3 were observed. The blue shift in the band gap energy was attributed to the Burstein-Moss effect. Changes in the photocurrent response and the electronic disorder were also discussed in the light of Al doping. Optical transmittances up to 60% at 550 nm were obtained, thus making these films suitable as transparent and conductive oxide films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 109, 30 October 2013, Pages 117-124
Journal: Electrochimica Acta - Volume 109, 30 October 2013, Pages 117-124
نویسندگان
Albert C. Aragonès, A. Palacios-Padrós, F. Caballero-Briones, Fausto Sanz,