کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6616626 | 459625 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrodeposition of CuInxGa1âxSe2 thin films from sulfosalicylic acid
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In the present study, single-step electrodeposition of a CuInGaSe2 film from the sulfosalicylic acid electrolyte containing Cu(II), In(III), Ga(III), and Se(IV) species was examined. It was showed that individual Ga(III) ions do not reduce at glass carbon electrode in selected conditions. Deposition of the desired CuInGaSe2 film as the main compound was achieved by fixing appropriate applied potentials. The analysis of cyclic voltammetry curves for joint reduction of two, three and four ions composed this semiconductor compound allowed to choose the optimal conditions for electrodeposition. The applied potential should be more negative, then â700 mV, ratio concentration ions in electrolyte Cu(II):Se(lV):In(III):Ga(III) equal 1:2:4:4, t = â¼70 °C. It was fabricated p-type CuInGaSe2 as a single phase. A new possible pathway to prepare chalcopyrite structure thin films from simple single-step electrodeposition of a quaternary precursor from sulfosalicylic acid should be used for photovoltaic application.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 107, 30 September 2013, Pages 120-125
Journal: Electrochimica Acta - Volume 107, 30 September 2013, Pages 120-125
نویسندگان
Margarita Dergacheva, Kazhmukan Urazov,