Ga and As competition for thiolate formation at p-GaAs(1Â 1Â 1) surfaces

- SAMs of 4,4′-thio-bis-benzene-thiolate were formed at p-GaAs(1 1 1) surfaces.
- Both As and Ga are involved in thiolate formation.
- Only one SH group participates in the chemisorption bond.
- Thiolate layer formed at GaAs(1 1 1)B is more stable than that formed at GaAs(1 1 1)A.
- Terminal atoms control the chemisorption-and packing-forces joint action.