Thermal analysis of a nano-pore silicon-based substrate using a YAG phosphor supported COB packaged LED module

This paper presents the development of a nano-pore silicon-based (NPSB) substrate as a thermal substrate for multi-chip array light-emitting diodes (LEDs) using a YAG phosphor supported chip-on-board (COB) package structure. The proposed structure of the substrate has a nanoporous anodised aluminium oxide (AAO) layer and silicon dioxide (SiO2), that are deposited by electroplating plasma-enhanced chemical vapour deposition (PECVD) on a thermally oxidised silicon wafer, respectively. To analyse the thermal characteristics of the proposed substrate, we use an InGaN blue LED with a 5 W multi-chip array and an individual LED chip size of 900 μm × 900 μm × 150 μm. The thermal performance was investigated, the junction temperature was estimated using the computational fluid dynamic (CFD) solver package, and the measurement results were validated using an infrared (IR) camera and the thermal transient tester (T3ster). Due to the effect of the cerium-activated yttrium aluminum garnet (YAG:Ce3+) yellow phosphor package on an NPSB thermal substrate, the parallel heat flow generates and induces reduction of the overall thermal resistance by as much as 0.3 K/W.