The effects of shower head orientation and substrate position on the uniformity of GaN growth in a HVPE reactor

In this study, we investigated the species transport and the GaN growth rate in a Hydride Vapor Phase Epitaxy (HVPE) reactor by computer simulation. Some parameters of shower head orientation and wafer position were applied within the geometric limitation of real experiments. Flow patterns in the HVPE reactor were significantly modified by different shower head orientations and had considerable influence on GaN growth rate.