Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors

Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 199, 5 November 2018, Pages 40-44

Dae-Young Jeon, Do-Kywn Kim, So Jeong Park, Yumin Koh, Chu-Young Cho, Gyu-Tae Kim, Kyung-Ho Park,