In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs

In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 147, 1 November 2015, Pages 92-95

Rodrigo Trevisoli Doria, Márcio Alves Sodré de Souza, João Antonio Martino, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello,