Monitoring defects in III-V materials: A nanoscale CAFM study

Goal: nanoscale defects, as Threading Dislocations (TD), Stacking Faults (SF), among others, in III-V materials grown over silicon wafers were characterized using a CAFM. The presented results show that the CAFM can help to identify various types of structural defects in III-V materials, as well as measure their conductive characteristic.163