A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor

A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 147, 1 November 2015, Pages 277-280

S.J. Cho, J.W. Roberts, I. Guiney, X. Li, G. Ternent, K. Floros, C.J. Humphreys, P.R. Chalker, I.G. Thayne,