Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0.53Ga0.47As MOS capacitors

Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0.53Ga0.47As MOS capacitors

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 147, 1 November 2015, Pages 325-329

É. O'Connor, K. Cherkaoui, S. Monaghan, B. Sheehan, I.M. Povey, P.K. Hurley,