Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer

Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 147, 1 November 2015, Pages 67-71

Yan-Lin Li, Kuei-Shu Chang-Liao, Chen-Chien Li, Li-Ting Chen, Tzu-Hsiang Su, Yu-Wei Chang, Ting-Chun Chen, Chia-Chi Tsai, Chia-Hung Kao, Hao-Ting Feng, Yao-Jen Lee,