Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process

Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 147, 1 November 2015, Pages 330-334

C.H. Fu, Y.H. Lin, W.C. Lee, T.D. Lin, R.L. Chu, L.K. Chu, P. Chang, M.H. Chen, W.J. Hsueh, S.H. Chen, G.J. Brown, J.I. Chyi, J. Kwo, M. Hong,