Application of ALD W films as gate filling metal in 22 nm HKMG-last integration: Evaluation and improvement of the adhesion in CMP process

Application of ALD W films as gate filling metal in 22 nm HKMG-last integration: Evaluation and improvement of the adhesion in CMP process

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 137, 2 April 2015, Pages 43-46

Qiang Xu, Jun Luo, Guilei Wang, Tao Yang, Junfeng Li, Tianchun Ye, Dapeng Chen, Chao Zhao,