In-situ study of the TDDB-induced damage mechanism in Cu/ultra-low-k interconnect structures

In-situ study of the TDDB-induced damage mechanism in Cu/ultra-low-k interconnect structures

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 137, 2 April 2015, Pages 47-53

Zhongquan Liao, Martin Gall, Kong Boon Yeap, Christoph Sander, Uwe Mühle, Jürgen Gluch, Yvonne Standke, Oliver Aubel, Norman Vogel, Meike Hauschildt, Armand Beyer, Hans-Jürgen Engelmann, Ehrenfried Zschech,