Ultrathin homogeneous Ni(Al) germanosilicide layer formation on strained SiGe with Al/Ni multi-layers

- Homogeneous Ni(Al) germanosilicide layers are formed on strained SiGe.
- Ni5(SiGe)3 phase is identified.
- Al concentration and annealing temperature influence the formed germanosilicides.
- The optimized process also applies to Si0.55Ge0.45 with higher Ge content.