Modular integration of annular TSV structures filled with tungsten in a 0.25 μm SiGe:C BiCMOS technology

Modular integration of annular TSV structures filled with tungsten in a 0.25 μm SiGe:C BiCMOS technology

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 137, 2 April 2015, Pages 153-157

S. Marschmeyer, J. Berthold, A. Krüger, M. Lisker, A. Scheit, S. Schulze, A. Trusch, M. Wietstruck, D. Wolansky,