کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6943520 | 1450345 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Resistive switching of in situ polymerized polystyrene matrix copolymerized with alkanedienyl passivated Si nanoparticles
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Silicon nanoparticles (Si NPs) were synthesized by chemical oxidation and etching method and capped using alkanedienyl passivation by covalent attachment of 1,9-decadiene to form resistive switching element. The alkanedienyl passivated Si NPs were in situ copolymerized into polystyrene (PS) matrix with monomer of styrene to form a polymerized resistive switching layer consisting in structure of ITO/PS-Si NPs/Al device. Write-read-erase-read operations controlled by bias were demonstrated in the device. These results can be extended to development for very thin resistive switching device based on organic solution process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 136, 25 March 2015, Pages 26-30
Journal: Microelectronic Engineering - Volume 136, 25 March 2015, Pages 26-30
نویسندگان
Minkeun Kim, Hunsang Jung, Yo-Han Kim, Chi-Jung Kang, Tae-Sik Yoon, Hyun Ho Lee,