کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6943578 | 1450349 | 2015 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nano electron source fabricated by beam-induced deposition and its unique feature
ترجمه فارسی عنوان
منبع الکترون نانو ساخته شده توسط رسوب ناشی از پرتو و ویژگی منحصر به فرد آن است
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
چکیده انگلیسی
The fabrication of nanoscale field emitters with gate structures using beam-induced deposition and their field emission properties are described. Nano electron sources can be fabricated by electron-beam-induced deposition without additional processes. The inherent issues of process contamination and the effectiveness of post cleaning using annealing or radical oxygen gas exposure to remove contaminants introduced during beam deposition are also discussed. In addition, coherent electron beams for electron wave interference emitted from a beam-deposited Pt field emitter were investigated by field emission microscopy and field ion microscopy. The interference fringe patterns observed for beam-deposited Pt field emitters were attributed to electron wave interference occurring at two adjacent emission sites on a single Pt nanocrystal.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 132, 25 January 2015, Pages 74-82
Journal: Microelectronic Engineering - Volume 132, 25 January 2015, Pages 74-82
نویسندگان
Katsuhisa Murakami, Mikio Takai,