Selective wet etching of Si3N4/SiO2 in phosphoric acid with the addition of fluoride and silicic compounds

Selective wet etching of Si3N4/SiO2 in phosphoric acid with the addition of fluoride and silicic compounds

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 118, 25 April 2014, Pages 66-71

Dongwan Seo, Jin Sung Bae, Eunseok Oh, Solbaro Kim, Sangwoo Lim,