Optimization of design of experiment for chemical mechanical polishing of a 12-inch wafer

- This study aimed to maximize the material removal rate and minimize the within wafer non-uniformity simultaneously.
- The design of experiment approach was used to optimize the process parameters for CMP of a 12-inch wafer.
- Confirmation tests indicated that MRR of 6551 Å/min and WIWNU of 4.72% can be obtained using the optimum combination.