Gate-first n-MOSFET with a sub-0.6-nm EOT gate stack

- Self-aligned and gate-first TiLaO/La2O3n-MOSFET shows an equivalent oxide thickness (EOT) of 0.57 nm.
- Small EOT can be reached using La silicate to suppress the formation of low-κ defective interface.
- This low-EOT MOSFET exhibits the potential to integrate with current CMOS process.