Electronic transport for polymer/Si-nanowire arrays/n-type Si diodes with and without Si-nanowire surface passivation

- Polymer/nanowires /Si diodes without H2O2 treatment show a poor rectifying behavior.
- Polymer/nanowires /Si diodes with H2O2 treatment show a good rectifying behavior.
- The interfacial defects of heterojunction devices were controlled by H2O2 treatment.
- Such an improvement indicates that a good passivation is formed at the interface.