Superior reliability of high mobility (Si)Ge channel pMOSFETs

- (Si)Ge channel pMOS technology offers remarkably reduced Negative Bias Temperature Instability (NBTI) at ultra-thin EOT.
- We ascribe this property to a reduced interaction of channel holes with dielectric defects thanks to energy decoupling.
- The reduced NBTI projects to a dramatic reduction of the time-dependent variability in nanoscale devices.
- Other device degradation mechanisms are shown not to constitute showstoppers.