Novel encapsulated ITO/arc-ZnO:TiO2 antireflective passivating layer for TCO conducting substrate prepared by simultaneous radio frequency-magnetron sputtering

► We fabricated ITO/arc-ZnO:TiO2 antireflective TCO with blocking layer capability for DSSCs. ► Step-down interference structure based on double layer antireflection coating was used. ► Two maximum transmittance peaks around 440 nm and 760 nm could be seen. ► About 11% and 3% reduction in reflectance compared to bare ITO alone were achieved. ► Stable properties of antireflective TCO against annealing temperature achieved.