Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 109, September 2013, Pages 142-147

P.C. Juan, C.L. Sun, C.H. Liu, C.L. Lin, F.C. Mong, J.H. Huang, H.S. Chang,