Microscopy study of the conductive filament in HfO2 resistive switching memory devices

- We study resistive switching memories with Hf or Ti metal oxygen exchange layers.
- STEM dark field and EELS are used to observe the conductive filament.
- The filament is a cone-shaped metal-rich region in the HfO2 dielectric layer.
- Composition of the metallic filament is dominated by Hf or Ti depending on the OEL.