Statistical insight into controlled forming and forming free stacks for HfOx RRAM

- Percolation model used to optimize oxide and cap thickness for forming-free RRAM.
- “Hot forming” helps reduce variability in the forming voltage statistics.
- Quantum point contact formulation has been used to explain “hot forming”.
- Forming is two-stage process involving filament nucleation (SBD) and growth (PBD).
- Convolution of filament nucleation and growth gives non-Weibullian statistics.