Multilevel resistive switching in ternary HfxAl1−xOy oxide with graded Al depth profile

- HfxAl1−xOy films with graded Al depth profile were grown by atomic layer deposition.
- The graded HfxAl1−xOy based stacks exhibit multilevel resistive switching behavior.
- Resistive switching is described in terms of redistribution of the oxygen vacancies.