Electron mobility in heavily doped junctionless nanowire SOI MOSFETs

- Mobility in highly doped junctionless trigate MOSFETs is experimentally studied.
- Mobility enhancement in narrow nanowire versus wide devices is demonstrated.
- Mobility values in narrow nanowire MOSFETs exceed the bulk mobility value.
- These effects are due to reduced impurity scattering in narrow nanowire devices.