Influence of La on the electrical properties of HfSiON: From diffusion to Vth shifts

- TiN/HfSiON/SiO2/Substrate stacks were investigated with C-V measurements and SIMS.
- No linear relationship of the threshold voltage on the La concentration at the HfSiON/SiO2 was found.
- A linear relationship of the threshold voltage on the La sheet concentration in the HfSiON was found.
- Crystallization of the HfSiON is proposed as explanation of the experimental findings.