A computational study of Si-H bonds as precursors for neutral E′ centres in amorphous silica and at the Si/SiO2 interface

A computational study of Si-H bonds as precursors for neutral E′ centres in amorphous silica and at the Si/SiO2 interface

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 109, September 2013, Pages 310-313

Sanliang Ling, Al-Moatasem El-Sayed, Francisco Lopez-Gejo, Matthew B. Watkins, V.V. Afanas'ev, Alexander L. Shluger,