Transient simulation to analyze flash memory programming improvements due to Germanium content in the substrate using Nonquasi-Static techniques

► Flash memory programming speeds can be improved by using a Silicon-Germanium based substrate material. ► Model was developed using a Nonquasi-Static MOSFET model as a foundation. ► Model has demonstrated accurate results as channel lengths are reduced. ► Probability based modeling was not able to adequately demonstrate the effects of Germanium in the substrate material.