Influence of illumination intensity and temperature on the electrical characteristics of an Al/p-GaAs/In structure prepared by thermal evaporation

► The electrical properties of Al/p-GaAs diode were investigated under various illumination and temperature conditions. ► The Al/p-GaAs diode exhibited a high photosensitivity. ► The Al/p-GaAs diode can be a candidate material in a light sensitive capacitor in modern electronic devices.