کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6944239 | 1450382 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis and characterization of low-k films for large area imaging applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Synthesis and characterization of low-k films for large area imaging applications Synthesis and characterization of low-k films for large area imaging applications](/preview/png/6944239.png)
چکیده انگلیسی
An organic liquid polymer based on methyltriethoxysilane has been synthesized. The material;when spin-coated onto wafers and thermally treated;lead to dielectric films of low permittivity;which can be used in hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) based large area imaging arrays as an inter-level dielectric between the TFT and pixel levels. Fourier Transform Infrared Spectroscopy (FTIR) shows prominent peaks of Si-CH3 stretch and Si-O stretch modes. The dielectric constant (k) of the film was found to decrease with increasing curing temperature (Tcure). However;k values were < 3 for Tcure < 260 °C;which is the upper limit for our a-Si:H process. Thermogravimetric analysis showed that major weight loss takes place for up to 200 °C;and the film stabilizes thereafter. The stress in the films was found to be compressive;and increased from 50 to 220 MPa when Tcure was increased from 250 to 450 °C. The low stress for low Tcure is a desirable property for film integration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 99, November 2012, Pages 58-61
Journal: Microelectronic Engineering - Volume 99, November 2012, Pages 58-61
نویسندگان
R. Jeyakumar, Z. Gu, S. Sivoththaman, A. Nathan,