Investigation of charge storage and retention characteristics of silicon nitride in NVM based on InGaZnO channels for system-on-panel applications

► Investigation of Si-rich SiNx for the charge traps type of NVM devices. ► The a-Si clusters in Si-rich SiNx films enhance charge storage capacity of devices. ► High-k and high-density in N-rich SiNx films improve the charge retention. ► NVM device with Si-rich SiNx had the widest memory window but the worst retention. ► The retention of device will improve when we reduce Si-rich into silicon nitride.