Analysis of process characteristics of self-aligned multiple patterning

► Self-aligned multiple patterning (SAMP) techniques for scaling to 5 nm are studied. ► It is shown that extra masks are required to solve the overlay challenges. ► SATP is most cost-effective as it allows fewer masks with 2-D design flexibility. ► SASP process will most likely reach the maximum cycles of frequency multiplication. ► It is unlikely to adopt SAOP or EUV + SADP process in VLSI manufacturing.