Evaluation of direct patternable inorganic spin-on hard mask materials using electron beam lithography

► Inorganic resists (non CAR) were evaluated and exposed using a 50kV VSB writer. ► The resists are based on hafnium oxides and spin-cast from aqueous solutions. ► XE15IB shows high resolution with dose and contrast comparable to HSQ. ► XE15CB shows high resolution and improved sensitivity, but a reduction in contrast. ► The exposure of a large SRAM metal 1 layer pattern (CD of 22 nm) was demonstrated.