کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
697215 890362 2008 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Maximum a posteriori estimation of activation energies that control silicon self-diffusion
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی کنترل و سیستم های مهندسی
پیش نمایش صفحه اول مقاله
Maximum a posteriori estimation of activation energies that control silicon self-diffusion
چکیده انگلیسی
Self-diffusion in crystalline silicon is controlled by a network of elementary steps whose activation energies are important to know in a variety of applications in microelectronic fabrication. The present work employs maximum a posteriori (MAP) estimation to improve existing values for these activation energies, based on self-diffusion data collected at different values of the loss rates for interstitial atoms to the surface. Parameter sensitivity analysis shows that for high surface loss fluxes, the energy for exchange between an interstitial and the lattice plays the leading role in determining the shape of diffusion profiles. At low surface loss fluxes, the dissociation energy of large-atom clusters plays a more important role. Subsequent MAP analysis provides significantly improved values for these parameters.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Automatica - Volume 44, Issue 9, September 2008, Pages 2241-2247
نویسندگان
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