Effects of hydrogen on the properties of Si-incorporated diamond-like carbon films prepared by pulsed laser deposition

We have deposited unhydrogenated and hydrogenated Si-incorporated DLC (Si-DLC) films by pulsed laser deposition using KrF excimer laser, and systematically examined the structure and the mechanical and tribological properties of the films. Hydrogenated Si-DLC films were prepared by atomic-hydrogen irradiation during deposition. The Si/(Si+C) ratio in DLC films increased by atomic-hydrogen irradiation during deposition, indicating that the hydrogen etching is more effective for C atoms compared with Si atoms. The formation of Si–C bonds in the films and silicon oxides only at the surfaces was confirmed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. It was found that the atomic-hydrogen irradiation led to the formation of Si–H bonds to prevent the surface oxidation of the Si-DLC films. The scratch tests revealed that the critical loads of the films deposited with hydrogen were higher than those of the films deposited without hydrogen. We found that the moderately hydrogen-irradiated Si-DLC films tended to have higher wear resistance than the unhydrogenated Si-DLC films.

Research Highlights
► The Si fraction in Si-DLC films increased by atomic-hydrogen irradiation.
► Atomic-hydrogen irradiation prevented the surface oxidation of the Si-DLC films.
► The critical load increased by atomic-hydrogen irradiation during deposition.
► The wear resistance was improved by atomic-hydrogen irradiation during deposition.