Influence of oxygen plasma treatment on properties of Methyl-BCN film

Methyl-BCN film as a low dielectric material has been investigated by our group for Cu/low-k interconnection. We studied the ashing characteristics of Methyl-BCN films using oxygen plasma. As a contrast, porous-SiOCH films were also treated by oxygen plasma with the same conditions. The change of composition ratio of Methyl-BCN film is less than that of porous-SiOCH film after oxygen plasma treatment. There is no evident change in each bond of Methyl-BCN film after treatment, either. FT-IR analysis was carried out to investigate the chemical bonds of Methyl-BCN films and porous-SiOCH films with and without oxygen plasma treatment. The methyl groups of Methyl-BCN film were more stable than that of porous-SiOCH film.