کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
702439 | 1460806 | 2012 | 4 صفحه PDF | دانلود رایگان |

One of the main challenges of delta-doping of diamond with boron resides in minimizing the width and optimizing the structural quality of the interface region between the heavily-doped ultra-thin layer and the non intentionally doped high mobility epilayers. In this work, we present an in situ etching-back approach to this problem. In particular, a careful SIMS profiling of the top interface shows that advanced gas switching procedures and adequate in situ O2 and H2 plasma etch steps lead to a rising depth lower than 2 nm per decade over 3 to 4 orders of magnitude of boron concentration. A specificity of the present work is that the multilayer structures were obtained without interrupting the microwave plasma during the whole process.
► Challenge of delta-doping of diamond is in reducing width and optimizing interfaces.
► Smart gas switching and in situ O2 and H2 plasma steps make sharp and thin interfaces.
► Multilayer structures were grown without plasma interruption during the process.
Journal: Diamond and Related Materials - Volume 24, April 2012, Pages 175–178