کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
703183 | 891128 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Numerical analysis of power absorption and gas pressure dependence of microwave plasma using a tractable plasma description
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Using a tractable plasma description, we have studied steady state of microwave plasmas under various operating conditions. Simplicity of the model allows us to carry out calculations with wide range of input parameters under realistic configurations. Model device used in the present simulation is based on the actual reactor for chemical vapor deposition of diamond. It is confirmed that, in spite of the model simplicity, the adopted model can, at least qualitatively, prescribe dependences of electron number density and power density on input microwave power and feed gas pressure. Linear dependence of the growth rate on the gas pressure, which is similar to numerically predicted dependence of the power density, is confirmed experimentally.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 15, Issue 9, September 2006, Pages 1395–1399
Journal: Diamond and Related Materials - Volume 15, Issue 9, September 2006, Pages 1395–1399
نویسندگان
Hideaki Yamada, Akiyoshi Chayahara, Yoshiaki Mokuno, Yousuke Soda, Yuji Horino, Naoji Fujimori,