کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
703183 891128 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Numerical analysis of power absorption and gas pressure dependence of microwave plasma using a tractable plasma description
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Numerical analysis of power absorption and gas pressure dependence of microwave plasma using a tractable plasma description
چکیده انگلیسی

Using a tractable plasma description, we have studied steady state of microwave plasmas under various operating conditions. Simplicity of the model allows us to carry out calculations with wide range of input parameters under realistic configurations. Model device used in the present simulation is based on the actual reactor for chemical vapor deposition of diamond. It is confirmed that, in spite of the model simplicity, the adopted model can, at least qualitatively, prescribe dependences of electron number density and power density on input microwave power and feed gas pressure. Linear dependence of the growth rate on the gas pressure, which is similar to numerically predicted dependence of the power density, is confirmed experimentally.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 15, Issue 9, September 2006, Pages 1395–1399
نویسندگان
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