کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7059230 1458088 2012 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Statistical phonon transport model for multiscale simulation of thermal transport in silicon: Part I - Presentation of the model
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی جریان سیال و فرایندهای انتقال
پیش نمایش صفحه اول مقاله
Statistical phonon transport model for multiscale simulation of thermal transport in silicon: Part I - Presentation of the model
چکیده انگلیسی
The Boltzmann transport equation can be used to model phonon transport in crystalline materials across multiple length scales. The statistical phonon transport model solves the Boltzmann transport equation in a statistical framework that incorporates a state-based phonon transport methodology. The statistical phonon transport model captures the anisotropy of the first Brillouin zone in addition to nonlinear dispersion. Three-phonon scattering is implemented conserving both energy and pseudo-momentum with probability limits based exclusively on the relative phonon populations available.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Heat and Mass Transfer - Volume 55, Issues 25–26, December 2012, Pages 7444-7452
نویسندگان
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