Simulation study on 4H-SiC power devices with high-k dielectric FP terminations

► Si3N4 and HfO2 as the field plate dielectrics in the SiC power device. ► Si3N4 and HfO2 filed plate enable improvement of reverse blocking performances. ► Maximum electric field can be greatly reduced in Si3N4 and HfO2 filed plate dielectric layer. ► Sensitivity of breakdown voltage to interface charge is efficiently suppressed.