The impact of H/D substitution on the structure, composition and thermal stability of grain boundaries in sub-micron diamond films deposited on silicon

► The v1 Raman peak of t-PA in deuterated poly-diamond films is a doublet. ► These films grow slower than standard films but in a more orderly fashion. ► Trans-polyacetylene chains in these films are mostly short, unlike in standard films. ► Raman peak at ~ 820 cm-1 indicates that stressed SiC is formed after CVD growth. ► This stress is released after vacuum annealing, as seen by the peak red-shift.